Thin Film Processes, Volume 2 |
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Page 52
This type of magnetron is well suited to manufacturing applications . By making
the long dimension of the racetrack somewhat longer than the dimensions of the
sample , films can be sputtered onto the sample ( from the cathode ) with a simple
...
This type of magnetron is well suited to manufacturing applications . By making
the long dimension of the racetrack somewhat longer than the dimensions of the
sample , films can be sputtered onto the sample ( from the cathode ) with a simple
...
Page 402
The diffracted x - ray intensity from the sample is obtained as a function of the
angle about a principal Bragg reflection , e . g . , ( 004 ) . The angular difference
between the GaAs substrate peak and the epilayer peak yields compositional ...
The diffracted x - ray intensity from the sample is obtained as a function of the
angle about a principal Bragg reflection , e . g . , ( 004 ) . The angular difference
between the GaAs substrate peak and the epilayer peak yields compositional ...
Page 404
Commercial Hg probes are readily available for use on very small samples up to
whole wafers . A useful variation of this ... A measurement is made , followed by a
step that electrochemically etches the sample surface . A controlled current is ...
Commercial Hg probes are readily available for use on very small samples up to
whole wafers . A useful variation of this ... A measurement is made , followed by a
step that electrochemically etches the sample surface . A controlled current is ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer