Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 341
... selective W can be deposited as long as selectivity is maintained . For example , following the Si reduction ... selective deposition on Al can be attained using WF6 - H2 at 300-500 ° C in hot- or cold - wall reactors [ 467 , 469 ] . An ...
... selective W can be deposited as long as selectivity is maintained . For example , following the Si reduction ... selective deposition on Al can be attained using WF6 - H2 at 300-500 ° C in hot- or cold - wall reactors [ 467 , 469 ] . An ...
Page 343
... selective W deposition rates on patterned wafers for Al via fill ( Fig . 8 ) are similar to those for blanket W , with a minimum at 400 ° C . Similar results were obtained for selective deposition on Si patterns . Increasing SiH4 ...
... selective W deposition rates on patterned wafers for Al via fill ( Fig . 8 ) are similar to those for blanket W , with a minimum at 400 ° C . Similar results were obtained for selective deposition on Si patterns . Increasing SiH4 ...
Page 381
... selective growth was strongly dependent upon the Al mole fraction and the temper- ature . At 600 ° C , selective epitaxy was obtained for x < 0.25 , while at 800 ° C the selectivity region was expanded to x < 0.5 . The corresponding In ...
... selective growth was strongly dependent upon the Al mole fraction and the temper- ature . At 600 ° C , selective epitaxy was obtained for x < 0.25 , while at 800 ° C the selectivity region was expanded to x < 0.5 . The corresponding In ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength