Thin Film Processes, Volume 2 |
From inside the book
Results 1-3 of 46
Page 341
A chemically selective deposition can occur under carefully controlled conditions
without consuming Si , as depicted in Eq . ( 6 . 2 ) : WF6 ( 8 ) ... 2 ) Any thickness
of selective W can be deposited as long as selectivity is maintained . For example
...
A chemically selective deposition can occur under carefully controlled conditions
without consuming Si , as depicted in Eq . ( 6 . 2 ) : WF6 ( 8 ) ... 2 ) Any thickness
of selective W can be deposited as long as selectivity is maintained . For example
...
Page 343
Extensive results have been published for selective and blanket W deposition on
Si and Al in a radiantly heated single - wafer commercial CVD reactor ( 482 ) .
Figure 7 shows an Arrhenius plot of blanket W deposition rate comparing H2 ...
Extensive results have been published for selective and blanket W deposition on
Si and Al in a radiantly heated single - wafer commercial CVD reactor ( 482 ) .
Figure 7 shows an Arrhenius plot of blanket W deposition rate comparing H2 ...
Page 350
Selective LPCVD of Al has been reported very recently where the authors used
dimethyl aluminum hydride as the source compound . Selective deposition
resulted on Si but not on SiO2 at a temperature of 235 - 245°C and at a
deposition rate ...
Selective LPCVD of Al has been reported very recently where the authors used
dimethyl aluminum hydride as the source compound . Selective deposition
resulted on Si but not on SiO2 at a temperature of 235 - 245°C and at a
deposition rate ...
What people are saying - Write a review
We haven't found any reviews in the usual places.
Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
Other editions - View all
Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |