Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 354
... Semiconductor International 7 ( 5 ) , 72 ( 1984 ) . 19. T. C. Bettes , Semiconductor International 5 ( 3 ) , 59 ( 1982 ) . 20. W. Kern and K. K. Schuegraf , in " Handbook of Thin - Film Deposition Processes and Techniques " ( K. K. ...
... Semiconductor International 7 ( 5 ) , 72 ( 1984 ) . 19. T. C. Bettes , Semiconductor International 5 ( 3 ) , 59 ( 1982 ) . 20. W. Kern and K. K. Schuegraf , in " Handbook of Thin - Film Deposition Processes and Techniques " ( K. K. ...
Page 370
... Semiconductors A. Introduction B. Unintentional or Background Impurities C. Dopants - Intentional Impurities X. Summary References I. INTRODUCTION Most of the advances in semiconductor processing have centered on the ability to decrease ...
... Semiconductors A. Introduction B. Unintentional or Background Impurities C. Dopants - Intentional Impurities X. Summary References I. INTRODUCTION Most of the advances in semiconductor processing have centered on the ability to decrease ...
Page 567
... semiconductor surfaces [ 7 , 2 ] . A large body of earlier work has shown that dielectric films deposited at low temperatures onto compound semiconductors surfaces using direct PECVD - mostly silicon dioxide , silicon nitride , and ...
... semiconductor surfaces [ 7 , 2 ] . A large body of earlier work has shown that dielectric films deposited at low temperatures onto compound semiconductors surfaces using direct PECVD - mostly silicon dioxide , silicon nitride , and ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength