Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 86
... shown in Fig . 3 , or a continuous system where the strip / sheet substrate is removed and inserted from the deposition chamber through air - to - air seals , as shown in Fig . 4 . For a reactive evaporation process using electron beam ...
... shown in Fig . 3 , or a continuous system where the strip / sheet substrate is removed and inserted from the deposition chamber through air - to - air seals , as shown in Fig . 4 . For a reactive evaporation process using electron beam ...
Page 103
... shown in Fig . 12. In the close cathode gun shown in Fig . 12 , the electron emitter is exposed directly to the molten evaporant . This leads to droplet impingement from the molten pool onto the cathode , leading to its failure because ...
... shown in Fig . 12. In the close cathode gun shown in Fig . 12 , the electron emitter is exposed directly to the molten evaporant . This leads to droplet impingement from the molten pool onto the cathode , leading to its failure because ...
Page 820
... shown to be linearly dependent on the concentration of carriers [ 125 ] . Under conditions where the gaseous ambient produces unpinning of the surface Fermi level of GaAs ( 100 ) , application of a negative bias voltage has been shown ...
... shown to be linearly dependent on the concentration of carriers [ 125 ] . Under conditions where the gaseous ambient produces unpinning of the surface Fermi level of GaAs ( 100 ) , application of a negative bias voltage has been shown ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength