Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 70
... shown in Fig . 59 , the hollow cathode is usually a tube with a gas source at one end and a small aperture at the ... shown in Fig . 60 , a hollow cathode can be used to supply additional electrons to a magnetron dis- charge by placing ...
... shown in Fig . 59 , the hollow cathode is usually a tube with a gas source at one end and a small aperture at the ... shown in Fig . 60 , a hollow cathode can be used to supply additional electrons to a magnetron dis- charge by placing ...
Page 86
... shown in Fig . 3 , or a continuous system where the strip / sheet substrate is removed and inserted from the deposition chamber through air - to - air seals , as shown in Fig . 4 . For a reactive evaporation process using electron beam ...
... shown in Fig . 3 , or a continuous system where the strip / sheet substrate is removed and inserted from the deposition chamber through air - to - air seals , as shown in Fig . 4 . For a reactive evaporation process using electron beam ...
Page 103
... shown in Fig . 12. In the close cathode gun shown in Fig . 12 , the electron emitter is exposed directly to the molten evaporant . This leads to droplet impingement from the molten pool onto the cathode , leading to its failure because ...
... shown in Fig . 12. In the close cathode gun shown in Fig . 12 , the electron emitter is exposed directly to the molten evaporant . This leads to droplet impingement from the molten pool onto the cathode , leading to its failure because ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength