Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 429
... Silane , SiH4 , was used as one of the first OMVPE dopant precursors . Si incorporation from SiH , always has a temperature- activated incorporation behavior indicative of a heterogeneous or surface- catalyzed decomposition . This is ...
... Silane , SiH4 , was used as one of the first OMVPE dopant precursors . Si incorporation from SiH , always has a temperature- activated incorporation behavior indicative of a heterogeneous or surface- catalyzed decomposition . This is ...
Page 543
... silane / argon plasma [ 132 ] , at 600 ° C in a silane / hydrogen plasma [ 133 ] , at 700 ° C in a straight silane plasma [ 6 ] , and at 625 ° C in a dichlorosilane / argon plasma [ 4 ] . Grain sizes ranging from 30 Å [ 134 ] to 500 Å ...
... silane / argon plasma [ 132 ] , at 600 ° C in a silane / hydrogen plasma [ 133 ] , at 700 ° C in a straight silane plasma [ 6 ] , and at 625 ° C in a dichlorosilane / argon plasma [ 4 ] . Grain sizes ranging from 30 Å [ 134 ] to 500 Å ...
Page 600
... silane break - up as studied in a mass spectrometer using the appearance potential technique . ( a ) Neutral silane ; ( b ) silane mixed with active species extracted from a remote He plasma under conditions that produce a - Si : H thin ...
... silane break - up as studied in a mass spectrometer using the appearance potential technique . ( a ) Neutral silane ; ( b ) silane mixed with active species extracted from a remote He plasma under conditions that produce a - Si : H thin ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength