Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 494
... silicon nitride were carried out by Boyer et al . [ 137 ] . With the ArF laser beam parallel to the substrate , they ... nitride films by more than a factor of five . Obtaining stoichiometric silicon nitride ( Si3N4 ) is hindered by the ...
... silicon nitride were carried out by Boyer et al . [ 137 ] . With the ArF laser beam parallel to the substrate , they ... nitride films by more than a factor of five . Obtaining stoichiometric silicon nitride ( Si3N4 ) is hindered by the ...
Page 537
... silicon nitride , silicon oxide , silicon oxynitride , and silicate glasses . A. Silicon Nitride Films of " silicon nitride , " SiN , H ,, are the first material deposited by the PECVD technique on a large production scale . Silicon ...
... silicon nitride , silicon oxide , silicon oxynitride , and silicate glasses . A. Silicon Nitride Films of " silicon nitride , " SiN , H ,, are the first material deposited by the PECVD technique on a large production scale . Silicon ...
Page 538
... nitride films deposited by conventional techniques with process parameters ... silicon content in the film . It decreases with increasing Si / N ratio [ 30 ... silicon - rich films exhibiting lower breakdown fields [ 30 , 79 ] . Film etch ...
... nitride films deposited by conventional techniques with process parameters ... silicon content in the film . It decreases with increasing Si / N ratio [ 30 ... silicon - rich films exhibiting lower breakdown fields [ 30 , 79 ] . Film etch ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength