Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 126
... similar to the reactive evaporation process in that metal atoms and reactive gases react to form a compound aided by ... similar to that shown in Fig . 17 except for the use of an electron - beam - heated evaporation source , and it is ...
... similar to the reactive evaporation process in that metal atoms and reactive gases react to form a compound aided by ... similar to that shown in Fig . 17 except for the use of an electron - beam - heated evaporation source , and it is ...
Page 325
... similar . The dissociation properties of the two arsenic com- pounds differ and depend on the As - to - O bondings . This influences the incorporation of As into the glass structure , and hence the diffusion prop- erties ...
... similar . The dissociation properties of the two arsenic com- pounds differ and depend on the As - to - O bondings . This influences the incorporation of As into the glass structure , and hence the diffusion prop- erties ...
Page 475
... similar experiments with various indium precursors ( indium trimethyl and cyclopentadienyl indium ) and GaAs and Pyrex substrates . They once again observed the formation of droplets on glass but obtained films with smoother morphology ...
... similar experiments with various indium precursors ( indium trimethyl and cyclopentadienyl indium ) and GaAs and Pyrex substrates . They once again observed the formation of droplets on glass but obtained films with smoother morphology ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength