Thin Film Processes, Volume 2 |
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Page 126
Reactive ion plating ( RIP ) is very similar to the reactive evaporation process in
that metal atoms and reactive gases react to form a compound aided by the
presence of a plasma . Since the partial pressures of the gases in reactive ion
plating ...
Reactive ion plating ( RIP ) is very similar to the reactive evaporation process in
that metal atoms and reactive gases react to form a compound aided by the
presence of a plasma . Since the partial pressures of the gases in reactive ion
plating ...
Page 325
The basic trends for triethylarsenate are similar . The dissociation properties of
the two arsenic compounds differ and depend on the As - to - O bondings . This
influences the incorporation of As into the glass structure , and hence the
diffusion ...
The basic trends for triethylarsenate are similar . The dissociation properties of
the two arsenic compounds differ and depend on the As - to - O bondings . This
influences the incorporation of As into the glass structure , and hence the
diffusion ...
Page 475
Aylett and Haigh [ 47 ] carried out similar experiments with various indium
precursors ( indium trimethyl and cyclopentadienyl indium ) and GaAs and Pyrex
substrates . They once again observed the formation of droplets on glass but
obtained ...
Aylett and Haigh [ 47 ] carried out similar experiments with various indium
precursors ( indium trimethyl and cyclopentadienyl indium ) and GaAs and Pyrex
substrates . They once again observed the formation of droplets on glass but
obtained ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer