Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 507
... solution is considered peptized when it is ready for dip coating , where the titania and silica solutions are truly ... solution is stirred in a narrow - necked flask at room temperature and left in an open flask to hydrolyze slowly for ...
... solution is considered peptized when it is ready for dip coating , where the titania and silica solutions are truly ... solution is stirred in a narrow - necked flask at room temperature and left in an open flask to hydrolyze slowly for ...
Page 509
... Solutions Typically , solution viscosities are measured with a rotating cylinder . The viscosity is plotted as the log of the viscosity in centipoise vs. real time , or , in some cases , vs. reduced time , real time divided by time - to ...
... Solutions Typically , solution viscosities are measured with a rotating cylinder . The viscosity is plotted as the log of the viscosity in centipoise vs. real time , or , in some cases , vs. reduced time , real time divided by time - to ...
Page 512
... solution is dripped on the center of the substrate . In most cases , a film thickness between 50 and 500 nm will result . Controlling the thickness is a matter of controlling the solution viscosity . Typical solution viscosities are 3 ...
... solution is dripped on the center of the substrate . In most cases , a film thickness between 50 and 500 nm will result . Controlling the thickness is a matter of controlling the solution viscosity . Typical solution viscosities are 3 ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength