Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 33
... species that may also be formed within the chamber . During reactive ion etching , gaseous species from the plasma react with surface atoms to form compounds or molecules . These species then leave the surface thermally , if the vapor ...
... species that may also be formed within the chamber . During reactive ion etching , gaseous species from the plasma react with surface atoms to form compounds or molecules . These species then leave the surface thermally , if the vapor ...
Page 75
... species becomes a factor , and the emission drops to approximately the current to the power . The sputtered species density is directly proportional to the discharge current . Therefore , the emission intensity of this species should be ...
... species becomes a factor , and the emission drops to approximately the current to the power . The sputtered species density is directly proportional to the discharge current . Therefore , the emission intensity of this species should be ...
Page 688
... species to be enhanced . The third mechanism that seems to apply to most known plasma- assisted etching reactions goes back to a number of carefully designed and relatively simple modeling experiments performed and interpreted by Coburn ...
... species to be enhanced . The third mechanism that seems to apply to most known plasma- assisted etching reactions goes back to a number of carefully designed and relatively simple modeling experiments performed and interpreted by Coburn ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength