Thin Film Processes, Volume 2 |
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Page 33
During reactive ion etching , gaseous species from the plasma react with surface
atoms to form compounds or molecules . These species then leave the surface
thermally , if the vapor pressure is high enough , or as a result of the ion ...
During reactive ion etching , gaseous species from the plasma react with surface
atoms to form compounds or molecules . These species then leave the surface
thermally , if the vapor pressure is high enough , or as a result of the ion ...
Page 75
In this case , the intensity should be directly proportional to the species density ,
as well as the electron density ( 24 ] . If one assumes that the electron density is
proportional to the discharge current ( a reasonable assumption ) , then the ...
In this case , the intensity should be directly proportional to the species density ,
as well as the electron density ( 24 ] . If one assumes that the electron density is
proportional to the discharge current ( a reasonable assumption ) , then the ...
Page 688
It was suggested that lattice damage produced by ion bombardment causes the
reaction rate of the incident gaseous species to be enhanced . The third
mechanism that seems to apply to most known plasmaassisted etching reactions
goes ...
It was suggested that lattice damage produced by ion bombardment causes the
reaction rate of the incident gaseous species to be enhanced . The third
mechanism that seems to apply to most known plasmaassisted etching reactions
goes ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer