Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
From inside the book
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Page 33
Samples are placed on the powered electrode and exposed to the flux of ions
from the plasma, as well as the more isotropic flux of gas species that may also
be formed within the chamber. During reactive ion etching, gaseous species from
the ...
Samples are placed on the powered electrode and exposed to the flux of ions
from the plasma, as well as the more isotropic flux of gas species that may also
be formed within the chamber. During reactive ion etching, gaseous species from
the ...
Page 75
In this case, the intensity should be directly proportional to the species density, as
well as the electron density [24]. If one assumes that the electron density is
proportional to the discharge current (a reasonable assumption), then the
emission ...
In this case, the intensity should be directly proportional to the species density, as
well as the electron density [24]. If one assumes that the electron density is
proportional to the discharge current (a reasonable assumption), then the
emission ...
Page 688
It was suggested that lattice damage produced by ion bombardment causes the
reaction rate of the incident gaseous species to be enhanced. The third
mechanism that seems to apply to most known plasma- assisted etching
reactions goes ...
It was suggested that lattice damage produced by ion bombardment causes the
reaction rate of the incident gaseous species to be enhanced. The third
mechanism that seems to apply to most known plasma- assisted etching
reactions goes ...
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Common terms and phrases
alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering structure substrate substrate temperature susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength
Bibliographic information
| Title | Thin film processes II Volume 2 of Thin Film Processes, Werner Kern |
| Authors | John L. Vossen, Werner Kern |
| Editors | John L. Vossen, Werner Kern |
| Edition | illustrated |
| Publisher | Academic Press, 1991 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282513, 9780127282510 |
| Length | 866 pages |
| Subjects | › › Electronic books Science / Physics Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Material Science Thin film devices Thin films |
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