Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 178
... sputtering [ 2 ] , magnetron sputtering [ 3 , 4 ] , and reactive sputtering [ 5 , 6 ] . Sputtering involves many interrelated physical and chemical processes . Although our basic understanding of this complex subject is incomplete ...
... sputtering [ 2 ] , magnetron sputtering [ 3 , 4 ] , and reactive sputtering [ 5 , 6 ] . Sputtering involves many interrelated physical and chemical processes . Although our basic understanding of this complex subject is incomplete ...
Page 199
... sputtering chamber by flowing argon gas . e . Amorphous Silicon a - Si : H films have been reactively sputtered with a planar magnetron [ 156 ] . The hydrogen content of the films was controlled by adjusting the hydrogen partial ...
... sputtering chamber by flowing argon gas . e . Amorphous Silicon a - Si : H films have been reactively sputtered with a planar magnetron [ 156 ] . The hydrogen content of the films was controlled by adjusting the hydrogen partial ...
Page 757
... sputtering , the sputtering is the result of a momentum cascade within the target material . Much theoretical and experimental work has been carried out regarding physical sputtering . While the basic processes are felt to be generally ...
... sputtering , the sputtering is the result of a momentum cascade within the target material . Much theoretical and experimental work has been carried out regarding physical sputtering . While the basic processes are felt to be generally ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength