Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 184
... material , which is typically 20-30 % of the starting target material . This problem can be overcome by providing relative motion of the target with respect to the magnets [ 66 ] . For example , in the rotatable cylindrical magnetron ...
... material , which is typically 20-30 % of the starting target material . This problem can be overcome by providing relative motion of the target with respect to the magnets [ 66 ] . For example , in the rotatable cylindrical magnetron ...
Page 189
... starting alloy material . A dopant , such as nitrogen , can be introduced into the metal film during growth by using reactive sputtering techniques ( Section IV , A ) . Any type of sputter source , either dc or rf , can be used to ...
... starting alloy material . A dopant , such as nitrogen , can be introduced into the metal film during growth by using reactive sputtering techniques ( Section IV , A ) . Any type of sputter source , either dc or rf , can be used to ...
Page 425
... material is not as severe a problem as with GaAs due , in part , to the weaker In - C bond . The decomposition kinetics of methyl- and ethyl - based indium alkyls have been studied in detail [ 11 ] . The purity of the starting ...
... material is not as severe a problem as with GaAs due , in part , to the weaker In - C bond . The decomposition kinetics of methyl- and ethyl - based indium alkyls have been studied in detail [ 11 ] . The purity of the starting ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength