Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 109
... Stoichiometric CdS crystals 200 Stoichiometric CdSe films Source tempeeratures varied around 700 ° C Bi source at 750 ° C , Te source temperature variable . Nre : Nвi = 10-40 300 400-500 52 Rate control by quartz - crystal oscillator ...
... Stoichiometric CdS crystals 200 Stoichiometric CdSe films Source tempeeratures varied around 700 ° C Bi source at 750 ° C , Te source temperature variable . Nre : Nвi = 10-40 300 400-500 52 Rate control by quartz - crystal oscillator ...
Page 115
... stoichiometry if allowed to react with residual gases . From Ta 1,050 ° C From Pt oven at 740 ° C . Films tend to deviate from stoichiometry . Suitable support materials : graphite , Ta , Mo , W , SiO2 , Al2O3 - coated W ; evaporation ...
... stoichiometry if allowed to react with residual gases . From Ta 1,050 ° C From Pt oven at 740 ° C . Films tend to deviate from stoichiometry . Suitable support materials : graphite , Ta , Mo , W , SiO2 , Al2O3 - coated W ; evaporation ...
Page 602
... stoichiometry ; i.e. , the formation of stoichiometric SiO2 is independent of the O2 / SiH4 ratio , but the deposition rate is a function of this ratio . Specifically , for a fixed flow of SiH4 , it is proportional to the O2 flow rate ...
... stoichiometry ; i.e. , the formation of stoichiometric SiO2 is independent of the O2 / SiH4 ratio , but the deposition rate is a function of this ratio . Specifically , for a fixed flow of SiH4 , it is proportional to the O2 flow rate ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength