Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 597
... studies , can be written as O2 * + SiH4 → SiO2 + 2H2O . ( 4.3 ) Finally , changes in the relative concentrations of ... studies that would support the formation of gaseous molecular species with any type of Si - O bonding group [ 46 ...
... studies , can be written as O2 * + SiH4 → SiO2 + 2H2O . ( 4.3 ) Finally , changes in the relative concentrations of ... studies that would support the formation of gaseous molecular species with any type of Si - O bonding group [ 46 ...
Page 611
... studies of the properties of the thin film dielectrics and semiconductors deposited by remote PECVD . The studies of the dielectric materials have emphasized the chemical composition , including the bonding of hydrogen , as well as ...
... studies of the properties of the thin film dielectrics and semiconductors deposited by remote PECVD . The studies of the dielectric materials have emphasized the chemical composition , including the bonding of hydrogen , as well as ...
Page 612
... studies iden- tified the local bonding configurations , e.g. , SiH and SiOH in the oxides , SiH and SiNH in the nitrides , and SiNH in nitride - rich oxynitrides . Studies by ellipsometry in which the optical index of refraction was ...
... studies iden- tified the local bonding configurations , e.g. , SiH and SiOH in the oxides , SiH and SiNH in the nitrides , and SiNH in nitride - rich oxynitrides . Studies by ellipsometry in which the optical index of refraction was ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength