Thin Film Processes, Volume 2 |
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Page 597
John L. Vossen, Werner Kern. only detectable by - product is H2 , and a “
balanced ” deposition reaction , confirmed by MS studies , can be written as 02 *
+ SiHa → SiO2 + 2H2 ; ( 4 . 2 ) and ( 2 ) for O2 > SiHą , the dominant by - product
is H2O ...
John L. Vossen, Werner Kern. only detectable by - product is H2 , and a “
balanced ” deposition reaction , confirmed by MS studies , can be written as 02 *
+ SiHa → SiO2 + 2H2 ; ( 4 . 2 ) and ( 2 ) for O2 > SiHą , the dominant by - product
is H2O ...
Page 611
The studies of the dielectric materials have emphasized the chemical
composition , including the bonding of hydrogen ... The studies of amorphous Si
have also focused on bonded hydrogen incorporation , but in addition have
emphasized ...
The studies of the dielectric materials have emphasized the chemical
composition , including the bonding of hydrogen ... The studies of amorphous Si
have also focused on bonded hydrogen incorporation , but in addition have
emphasized ...
Page 612
For films in which hydrogen was intentionally incorporated , these studies
identified the local bonding configurations , e . g . , SiH and SiOH in the oxides ,
SiH and SiNH in the nitrides , and SiNH in nitride - rich oxynitrides . Studies by ...
For films in which hydrogen was intentionally incorporated , these studies
identified the local bonding configurations , e . g . , SiH and SiOH in the oxides ,
SiH and SiNH in the nitrides , and SiNH in nitride - rich oxynitrides . Studies by ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer