Thin Film Processes, Volume 2 |
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Page 121
Plasma - Substrate Interactions . Substrates exposed to a glow discharge are
bombarded by energetic neutrals , ions , and electrons . The nature and energy
of the bombarding species are primarily dependent on the process parameters
and ...
Plasma - Substrate Interactions . Substrates exposed to a glow discharge are
bombarded by energetic neutrals , ions , and electrons . The nature and energy
of the bombarding species are primarily dependent on the process parameters
and ...
Page 252
The substrates are then further cleaned by high - energy ion bombardment ,
either with ions originating from the arc sources or ... In the former method , the
arc sources are ignited and a high negative bias voltage is applied to the
substrate .
The substrates are then further cleaned by high - energy ion bombardment ,
either with ions originating from the arc sources or ... In the former method , the
arc sources are ignited and a high negative bias voltage is applied to the
substrate .
Page 407
The mixture of surface oxides typically forms a thin amorphous layer of material
that prevents the structural information from being transmitted from the substrate
into the growing layer . There are many pregrowth surface treatments that have ...
The mixture of surface oxides typically forms a thin amorphous layer of material
that prevents the structural information from being transmitted from the substrate
into the growing layer . There are many pregrowth surface treatments that have ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
25 other sections not shown
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Common terms and phrases
addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer
Bibliographic information
| Title | Thin Film Processes, Volume 2 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Export Citation | BiBTeX EndNote RefMan |