Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 219
... surface of the cathode ( 102 m / sec ) . A num- ber of factors influence the velocity of the arc spot ; the composition of the cathode , gas pressure and species , and the application of magnetic fields . Attempts to obtain even the ...
... surface of the cathode ( 102 m / sec ) . A num- ber of factors influence the velocity of the arc spot ; the composition of the cathode , gas pressure and species , and the application of magnetic fields . Attempts to obtain even the ...
Page 407
... surface , free of chemical and structural defects . Semiconductors readily form a native oxide on surfaces exposed to air . The mixture of surface oxides typically forms a thin amorphous layer of material that prevents the structural ...
... surface , free of chemical and structural defects . Semiconductors readily form a native oxide on surfaces exposed to air . The mixture of surface oxides typically forms a thin amorphous layer of material that prevents the structural ...
Page 409
... surface preparation . Such impurities mask the surface and prevent the transmission of the epitaxial information into the growing layer . Epitaxial growth can be undertaken on a variety of crystal surfaces . In general , the ( 100 ) ...
... surface preparation . Such impurities mask the surface and prevent the transmission of the epitaxial information into the growing layer . Epitaxial growth can be undertaken on a variety of crystal surfaces . In general , the ( 100 ) ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength