Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 302
... susceptor at high speeds ( > 500 rpm ) to emulate a rotating disk flow , which creates a uniform mass transfer layer ( i.e. , uniform deposition rate ) in the absence of wall effects [ 191 , 193 , 196 ] . The pumping action of the ...
... susceptor at high speeds ( > 500 rpm ) to emulate a rotating disk flow , which creates a uniform mass transfer layer ( i.e. , uniform deposition rate ) in the absence of wall effects [ 191 , 193 , 196 ] . The pumping action of the ...
Page 308
... susceptor rotation , suscep- tor edge , and reactor geometry on film thickness uniformity and interface composition ... susceptor temperatures , generate large growth - rate and composition nonuniformities . Simple one - dimensional ...
... susceptor rotation , suscep- tor edge , and reactor geometry on film thickness uniformity and interface composition ... susceptor temperatures , generate large growth - rate and composition nonuniformities . Simple one - dimensional ...
Page 396
... Susceptor ( cm ) Fig . 6. Measured ( dashed lines ) and predicted ( solid lines ) isotherms above the susceptor for different inlet flow rates and carrier gases : ( a ) hydrogen at 2 standard liters per minute ( slm ) , ( b ) hydrogen ...
... Susceptor ( cm ) Fig . 6. Measured ( dashed lines ) and predicted ( solid lines ) isotherms above the susceptor for different inlet flow rates and carrier gases : ( a ) hydrogen at 2 standard liters per minute ( slm ) , ( b ) hydrogen ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength