Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 297
... thermal flux by diffusion Peclet ( mass ) mass flux by conversion Pem = Re Sc 10-1-103 mass flux by diffusion Grashof ( thermal ) Gr1 = Grashof ( solutal ) Gr , = Rayleigh ( thermal ) Ra1 = Gr , Pr 8B , L'AT 1,2 8B L'Ac 12 buoyancy ...
... thermal flux by diffusion Peclet ( mass ) mass flux by conversion Pem = Re Sc 10-1-103 mass flux by diffusion Grashof ( thermal ) Gr1 = Grashof ( solutal ) Gr , = Rayleigh ( thermal ) Ra1 = Gr , Pr 8B , L'AT 1,2 8B L'Ac 12 buoyancy ...
Page 838
... Thermal , gas- or liquid - phase photochemical , and carrier - driven photochemical processes have also been employed . In many cases , the mechanism of a laser - driven etching process is a combination of these mechanisms . Many of the ...
... Thermal , gas- or liquid - phase photochemical , and carrier - driven photochemical processes have also been employed . In many cases , the mechanism of a laser - driven etching process is a combination of these mechanisms . Many of the ...
Page 844
... thermal mechanism [ 31 , 32 ] . Laser - induced melting of an alumina / TiC ceramic has produced very rapid etching by KOH [ 210 ] . Both TiC and TiB2 have been etched in a few torr of Cl2 during heating with a laser [ 276 ] . The ...
... thermal mechanism [ 31 , 32 ] . Laser - induced melting of an alumina / TiC ceramic has produced very rapid etching by KOH [ 210 ] . Both TiC and TiB2 have been etched in a few torr of Cl2 during heating with a laser [ 276 ] . The ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength