Thin Film Processes, Volume 2 |
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Page 157
With a low MBE growth temperature , careful composition , and thickness control ,
it is possible to grow these heterostructures up to several micrometers in
thickness ; practical devices are now possible ( 62 – 64 ) . Evaporation of Ge from
an ...
With a low MBE growth temperature , careful composition , and thickness control ,
it is possible to grow these heterostructures up to several micrometers in
thickness ; practical devices are now possible ( 62 – 64 ) . Evaporation of Ge from
an ...
Page 414
It is therefore possible to grow highly mismatched materials , without extended
defects , to a limited thickness as shown in Fig . 11 . The exact maximum
thickness prior to the formation of extended defects , commonly referred to as the
critical ...
It is therefore possible to grow highly mismatched materials , without extended
defects , to a limited thickness as shown in Fig . 11 . The exact maximum
thickness prior to the formation of extended defects , commonly referred to as the
critical ...
Page 510
The expressions relating film thickness and withdrawal rate and film thickness
and oxide content are derived with all of the necessary assumptions . Two simple
relationships are illustrated . In Fig . 3 , it is shown that the film thickness
increases ...
The expressions relating film thickness and withdrawal rate and film thickness
and oxide content are derived with all of the necessary assumptions . Two simple
relationships are illustrated . In Fig . 3 , it is shown that the film thickness
increases ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer