Thin film processes IIThis sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques. Key Features * Provides an all-new sequel to the 1978 classic, Thin Film Processes * Introduces new topics, and several key topics presented in the original volume are updated * Emphasizes practical applications of major thin film deposition and etching processes * Helps readers find the appropriate technology for a particular application |
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Page 157
With a low MBE growth temperature, careful composition, and thickness control, it
is possible to grow these heterostructures up to several micrometers in thickness;
practical devices are now possible [62-64]. Evaporation of Ge from an EB ...
With a low MBE growth temperature, careful composition, and thickness control, it
is possible to grow these heterostructures up to several micrometers in thickness;
practical devices are now possible [62-64]. Evaporation of Ge from an EB ...
Page 414
It is therefore possible to grow highly mismatched materials, without extended
defects, to a limited thickness as shown in Fig. 11. The exact maximum thickness
prior to the formation of extended defects, commonly referred to as the critical ...
It is therefore possible to grow highly mismatched materials, without extended
defects, to a limited thickness as shown in Fig. 11. The exact maximum thickness
prior to the formation of extended defects, commonly referred to as the critical ...
Page 510
The expressions relating film thickness and withdrawal rate and film thickness
and oxide content are derived with all of the necessary assumptions. Two simple
relationships are illustrated. In Fig. 3, it is shown that the film thickness increases
...
The expressions relating film thickness and withdrawal rate and film thickness
and oxide content are derived with all of the necessary assumptions. Two simple
relationships are illustrated. In Fig. 3, it is shown that the film thickness increases
...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor refractory metal region remote PECVD RHEED semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering structure substrate substrate temperature susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength
Bibliographic information
| Title | Thin film processes II Volume 2 of Thin Film Processes, Werner Kern |
| Authors | John L. Vossen, Werner Kern |
| Editors | John L. Vossen, Werner Kern |
| Edition | illustrated |
| Publisher | Academic Press, 1991 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282513, 9780127282510 |
| Length | 866 pages |
| Subjects | › › Electronic books Science / Physics Technology & Engineering / Electronics / Semiconductors Technology & Engineering / Material Science Thin film devices Thin films |
| Export Citation | BiBTeX EndNote RefMan |