Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 402
... tion of the emitted x - rays yields compositional information . Proper calibra- tion standards must be used to determine the composition of the sample accurately . Compositional information as a function of depth into the substrate can ...
... tion of the emitted x - rays yields compositional information . Proper calibra- tion standards must be used to determine the composition of the sample accurately . Compositional information as a function of depth into the substrate can ...
Page 687
... tion function . Unfortunately , information on ƒ ( e ) and σ is generally un- available for the types of molecules used in plasma etching . ƒ ( e ) can to a reasonable degree of accuracy be approximated by a Maxwellian distribu- tion ...
... tion function . Unfortunately , information on ƒ ( e ) and σ is generally un- available for the types of molecules used in plasma etching . ƒ ( e ) can to a reasonable degree of accuracy be approximated by a Maxwellian distribu- tion ...
Page 793
... tion . The movement of the Fresnel peaks away from the wall as the hole deepens causes tapering and trenching . This ... tion , it is possible to vary the edge profile from nearly vertical to highly tapered [ 57 ] . This effect is also a ...
... tion . The movement of the Fresnel peaks away from the wall as the hole deepens causes tapering and trenching . This ... tion , it is possible to vary the edge profile from nearly vertical to highly tapered [ 57 ] . This effect is also a ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength