Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 114
... torr . From Pt at 530-730 ° C From Al2O3 crucible at 1,300-1,440 ° C . Heavy decomposition with Po2 = 4 × 107 torr at 1,586 ° C 14 1 Lower oxides result if evaporated from W supports . Pt heaters do not produce decomposition Usually ...
... torr . From Pt at 530-730 ° C From Al2O3 crucible at 1,300-1,440 ° C . Heavy decomposition with Po2 = 4 × 107 torr at 1,586 ° C 14 1 Lower oxides result if evaporated from W supports . Pt heaters do not produce decomposition Usually ...
Page 344
... Torr 260 m Torr H2 2.0 700 m Torr 2.5 1000 / T ( 1 / ° K ) Fig . 7. Blanket W deposition rate vs. temperature , comparing H2 and SiH , reduction of WF6 . The SiH4 process is shown for various flow rates and reactor pressures . SiH4 ...
... Torr 260 m Torr H2 2.0 700 m Torr 2.5 1000 / T ( 1 / ° K ) Fig . 7. Blanket W deposition rate vs. temperature , comparing H2 and SiH , reduction of WF6 . The SiH4 process is shown for various flow rates and reactor pressures . SiH4 ...
Page 681
... Torr 0.01 0.2 Torr 0.1 - 1 Torr 104 lon beam assisted chem . etch . 10-3 Torr 10-4 - 10-1 Torr Fig . 4. Categories of dry etching methods and typical energy and pressure ranges . ( Reproduced by permission from Ref . 22. ) v - 1 ...
... Torr 0.01 0.2 Torr 0.1 - 1 Torr 104 lon beam assisted chem . etch . 10-3 Torr 10-4 - 10-1 Torr Fig . 4. Categories of dry etching methods and typical energy and pressure ranges . ( Reproduced by permission from Ref . 22. ) v - 1 ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength