Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 49
... uniformity , and various shields must be placed near the cathode to help " shape " the uniformity by absorbing a fraction of the flux . An alternative to translating the sample to achieve good uniformity is to move the magnet array ...
... uniformity , and various shields must be placed near the cathode to help " shape " the uniformity by absorbing a fraction of the flux . An alternative to translating the sample to achieve good uniformity is to move the magnet array ...
Page 144
... uniformity result [ 10 ] . Figure 5 shows the geometry of a conical cell with respect to the substrate , where D is the radius of the substrate , L is the distance from the top of the cell to the substrate center , A is the opening of ...
... uniformity result [ 10 ] . Figure 5 shows the geometry of a conical cell with respect to the substrate , where D is the radius of the substrate , L is the distance from the top of the cell to the substrate center , A is the opening of ...
Page 774
... uniformity is to use a large enough ion beam to obtain the desired value of uniformity over the size of the target . In Fig . 7 , for example , one might expect about ± 2 % over a diameter half as large as the one shown for ± 5 % . This ...
... uniformity is to use a large enough ion beam to obtain the desired value of uniformity over the size of the target . In Fig . 7 , for example , one might expect about ± 2 % over a diameter half as large as the one shown for ± 5 % . This ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength