Thin Film Processes, Volume 2 |
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Page 49
However , this rotation in itself is insufficient to ensure uniformity , and various
shields must be placed near the cathode to help “ shape ” the uniformity by
absorbing a fraction of the flux . An alternative to translating the sample to
achieve good ...
However , this rotation in itself is insufficient to ensure uniformity , and various
shields must be placed near the cathode to help “ shape ” the uniformity by
absorbing a fraction of the flux . An alternative to translating the sample to
achieve good ...
Page 144
Deposition uniformity is improved significantly with a conical instead of cylindrical
crucible . Flux distribution of a conical crucible was simulated [ 8 ] by assuming
that the flux originates from source material covering the bottom , and that the ...
Deposition uniformity is improved significantly with a conical instead of cylindrical
crucible . Flux distribution of a conical crucible was simulated [ 8 ] by assuming
that the flux originates from source material covering the bottom , and that the ...
Page 774
experimental measurements of etch uniformity are preferred over calculations
based on the ion - beam profile . Without target motion to average the
contributions from different portions of the ion beam , a etch uniformity within
about 25 % is ...
experimental measurements of etch uniformity are preferred over calculations
based on the ion - beam profile . Without target motion to average the
contributions from different portions of the ion beam , a etch uniformity within
about 25 % is ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer