Thin Film Processes, Volume 2 |
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Page 87
INERT GAS AT - ATMOSPHERIC PRESSURE STEERING HIGH VACUUM pa
UNWIND JHEATINGI | ZONE 0 0704 ELECTRON VACUUM | BEAM VACUUM
Ibibdl & PUMPING PUMPING IWI DEGREASE SEAL PROCESS SEAL COOL ...
INERT GAS AT - ATMOSPHERIC PRESSURE STEERING HIGH VACUUM pa
UNWIND JHEATINGI | ZONE 0 0704 ELECTRON VACUUM | BEAM VACUUM
Ibibdl & PUMPING PUMPING IWI DEGREASE SEAL PROCESS SEAL COOL ...
Page 218
THE CATHODIC ARC A . Vacuum Arcs As Ecker ( 18 ) notes , the term vacuum
arc is a paradox because , if a vacuum exists , there can be no arc , and vice
versa . The term vacuum arc , as employed here , means an arc sustained by
material ...
THE CATHODIC ARC A . Vacuum Arcs As Ecker ( 18 ) notes , the term vacuum
arc is a paradox because , if a vacuum exists , there can be no arc , and vice
versa . The term vacuum arc , as employed here , means an arc sustained by
material ...
Page 777
In removing the ion - beam heat input , the basic problem is that heat transfer in a
vacuum is poor . In atmosphere , the air and adsorbed layers of water vapor and
hydrocarbons provide good thermal contact between parts that are bolted or ...
In removing the ion - beam heat input , the basic problem is that heat transfer in a
vacuum is poor . In atmosphere , the air and adsorbed layers of water vapor and
hydrocarbons provide good thermal contact between parts that are bolted or ...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer