Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 49
... various surfaces and dividing by the initial number of sputter - etched atoms . The results , in Table IV , suggest that transport is best at lowest pressure and closest throw distance , as might be expected . However , when the mass of ...
... various surfaces and dividing by the initial number of sputter - etched atoms . The results , in Table IV , suggest that transport is best at lowest pressure and closest throw distance , as might be expected . However , when the mass of ...
Page 139
... various arriving species com- pete for incorporation . Assuming a typical rate of 1 μm / h ( about one monatomic layer a second ) , the equivalent partial pressure at the substrate surface is about 10-6 torr . In order to reduce ...
... various arriving species com- pete for incorporation . Assuming a typical rate of 1 μm / h ( about one monatomic layer a second ) , the equivalent partial pressure at the substrate surface is about 10-6 torr . In order to reduce ...
Page 156
... various chemical etching pro- cedures were also outlined . A major source of defects is particulate gene- ration in the growth system . Because of the presence of various electrical charges , particulates move about in the chamber quite ...
... various chemical etching pro- cedures were also outlined . A major source of defects is particulate gene- ration in the growth system . Because of the presence of various electrical charges , particulates move about in the chamber quite ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength