Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 21
... voltage , the current will increase with a small increase in voltage . This is called the Townsend discharge [ 4 ] and V ( BREAKDOWN ) ( volts ) 1200 800 400 MINIMUM BREAKDOWN VOLTAGE 10 100 PRESSURE ยท DISTANCE ( Torr - cm ) Fig . 4 ...
... voltage , the current will increase with a small increase in voltage . This is called the Townsend discharge [ 4 ] and V ( BREAKDOWN ) ( volts ) 1200 800 400 MINIMUM BREAKDOWN VOLTAGE 10 100 PRESSURE ยท DISTANCE ( Torr - cm ) Fig . 4 ...
Page 29
... voltage , however , can be used to roughly estimate the level of ion bom- bardment at a given power . In general , lower bias voltage correlates with higher effective discharge currents . The current flow in these discharges is space ...
... voltage , however , can be used to roughly estimate the level of ion bom- bardment at a given power . In general , lower bias voltage correlates with higher effective discharge currents . The current flow in these discharges is space ...
Page 771
... voltages . The accelerator negative voltage is required to prevent electron backstreaming . An accelerator voltage that is 15-20 % of the beam voltage is usually sufficient to stop electron backstreaming . The use of a larger accelerator ...
... voltages . The accelerator negative voltage is required to prevent electron backstreaming . An accelerator voltage that is 15-20 % of the beam voltage is usually sufficient to stop electron backstreaming . The use of a larger accelerator ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength