Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 21
... voltage , the current will increase with a small increase in voltage . This is called the Townsend discharge [ 4 ] and V ( BREAKDOWN ) ( volts ) 1200 800 400 1 MINIMUM BREAKDOWN VOLTAGE 10 100 PRESSURE ยท DISTANCE ( Torr - cm ) Fig . 4 ...
... voltage , the current will increase with a small increase in voltage . This is called the Townsend discharge [ 4 ] and V ( BREAKDOWN ) ( volts ) 1200 800 400 1 MINIMUM BREAKDOWN VOLTAGE 10 100 PRESSURE ยท DISTANCE ( Torr - cm ) Fig . 4 ...
Page 29
... voltage , however , can be used to roughly estimate the level of ion bom- bardment at a given power . In general , lower bias voltage correlates with higher effective discharge currents . The current flow in these discharges is space ...
... voltage , however , can be used to roughly estimate the level of ion bom- bardment at a given power . In general , lower bias voltage correlates with higher effective discharge currents . The current flow in these discharges is space ...
Page 771
... voltages . The accelerator negative voltage is required to prevent electron backstreaming . An accelerator voltage that is 15-20 % of the beam voltage is usually sufficient to stop electron backstreaming . The use of a larger accelerator ...
... voltages . The accelerator negative voltage is required to prevent electron backstreaming . An accelerator voltage that is 15-20 % of the beam voltage is usually sufficient to stop electron backstreaming . The use of a larger accelerator ...
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alloy anode Appl applications AsH3 atoms cathode chamber chemical chemical vapor deposition coatings composition compound semiconductors compounds Crystal Growth CVD reactors density deposition process deposition rate device dielectric diffusion dopant doping effects Electrochem electron emission epitaxial etch rate film deposition flux GaAs gas-phase gases glow discharge grid growth rate heating increase ion beam ion bombardment ion energy ion source ionization K. F. Jensen kinetics laser layer Lett LPCVD magnetic field magnetron material metal mtorr nitride nucleation OMVPE optical oxide particle PECVD photochemical photodeposition photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reactive region remote PECVD semiconductor SiH4 silane silicides silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering substrate substrate temperature susceptor target techniques Technol Technology thermal thin films Thin Solid Films tion torr typically vacuum voltage wafer wavelength