Thin Film Processes, Volume 2 |
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Page 21
This equation can be plotted in terms of the breakdown voltage as a function of
Pd , as in Fig . 4 . This type of curve is often called a Paschen curve , and the
minimum breakdown voltage is called the Paschen minimum . Because of
differences ...
This equation can be plotted in terms of the breakdown voltage as a function of
Pd , as in Fig . 4 . This type of curve is often called a Paschen curve , and the
minimum breakdown voltage is called the Paschen minimum . Because of
differences ...
Page 26
COLLECT ELECTRONS COLLECT ELECTRONS VOLTAGE TIME - - - VBIAS
COLLECT IONS COLLECT IONS Fig . 9 . The potential on the powered electrode
of Fig . 8b as a function of time for the first several rf cycles . In the plasma , the ...
COLLECT ELECTRONS COLLECT ELECTRONS VOLTAGE TIME - - - VBIAS
COLLECT IONS COLLECT IONS Fig . 9 . The potential on the powered electrode
of Fig . 8b as a function of time for the first several rf cycles . In the plasma , the ...
Page 771
The steep variation of ion - beam current with voltage , together with the frequent
need for a high ion - beam current , has , in the past , frequently resulted in ion
source operation at higher - than - optimum ion energies . Considerable progress
...
The steep variation of ion - beam current with voltage , together with the frequent
need for a high ion - beam current , has , in the past , frequently resulted in ion
source operation at higher - than - optimum ion energies . Considerable progress
...
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Contents
ROSSNAGEL | 12 |
rf Diode Plasmas | 24 |
Plasmas in the Presence of Magnetic Fields | 39 |
Copyright | |
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addition alloy Appl applications atoms beam cathode chamber charge chemical coatings composition compound contamination Crystal density dependent deposition rate developed device direct discharge discussed effects electric Electrochem electron energy epitaxial etching evaporation example excitation film deposition flow flux formation function GaAs gases geometry growth heating higher important increase ionization laser layer lead Lett limited lower magnetic field magnetron material measured mechanism metal method observed obtained occurs operation optical oxide particle PECVD phase Phys Physics plasma potential precursor present pressure produce properties pump range ratio reaction reactive reactor reduced region relatively resistivity sample selective semiconductor shown silicon similar SiO2 Solid species sputtering structure studies substrate surface techniques Technol Technology temperature thermal thickness thin film tion typically uniformity vacuum voltage wafer