Thin Film Processes, Volume 2John L. Vossen, Werner Kern Academic Press, 1978 - Thin films |
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Page 106
... wavelength band of the laser must be found and mounted in such a way that it is not rapidly covered up by the evaporant flux . ( 2 ) It is not always possible to find a laser with a wavelength compat- ible with the absorption ...
... wavelength band of the laser must be found and mounted in such a way that it is not rapidly covered up by the evaporant flux . ( 2 ) It is not always possible to find a laser with a wavelength compat- ible with the absorption ...
Page 445
... wavelength radiation to the deposition of films from the gas phase is stressed . Photo - CVD is only one member of an ever - growing class of processes , including those fundamentally photochemical or thermal in nature , that are now ...
... wavelength radiation to the deposition of films from the gas phase is stressed . Photo - CVD is only one member of an ever - growing class of processes , including those fundamentally photochemical or thermal in nature , that are now ...
Page 451
... Wavelength ( nm ) ( a ) 300 400 500 600 Wavelength ( nm ) ( b ) Fig . 5. Vapor phase absorption spectra of the acetylacetonates ( acacs ) of ( a ) platinum and ( b ) iridium in the UV and visible ( reprinted from Ref . 17 , by ...
... Wavelength ( nm ) ( a ) 300 400 500 600 Wavelength ( nm ) ( b ) Fig . 5. Vapor phase absorption spectra of the acetylacetonates ( acacs ) of ( a ) platinum and ( b ) iridium in the UV and visible ( reprinted from Ref . 17 , by ...
Contents
Processing Plasmas | 16 |
rf Diode Plasmas | 24 |
Afterglow Plasmas | 37 |
Copyright | |
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alloy anode Appl applications AsH3 atoms chamber chemical chemical vapor deposition coatings composition compound Crystal Growth density deposition process deposition rate device dielectric dopant doping effects Electrochem emission epitaxial etch rate evaporation excitation film deposition flow flux GaAs gas-phase gases glow discharge grid growth rate heater heating increase ion beam ion bombardment ion energy ion source ionization kinetic laser layer Lett LPCVD magnetic field magnetron material metal molecules nitride OMVPE optical oxide particle PECVD photochemical photodeposition photon photoresist Phys plasma plasma etching potential precursor pressure Proc produce pump ratio reactants reaction reactor region remote PECVD semiconductor shown in Fig SiH4 silane silicon silicon nitride SiO2 sol-gel species sputter deposition sputtering stoichiometric substrate substrate temperature surface susceptor target techniques Technol Technology thermal thickness thin film Thin Solid Films tion torr typically vacuum voltage wafer wavelength