Principles of Plasma Discharges and Materials ProcessingA Thorough Update of the Industry Classic on Principles of Plasma Processing The first edition of Principles of Plasma Discharges and Materials Processing, published over a decade ago, was lauded for its complete treatment of both basic plasma physics and industrial plasma processing, quickly becoming the primary reference for students and professionals. The Second Edition has been carefully updated and revised to reflect recent developments in the field and to further clarify the presentation of basic principles. Along with in-depth coverage of the fundamentals of plasma physics and chemistry, the authors apply basic theory to plasma discharges, including calculations of plasma parameters and the scaling of plasma parameters with control parameters. New and expanded topics include: * Updated cross sections * Diffusion and diffusion solutions * Generalized Bohm criteria * Expanded treatment of dc sheaths * Langmuir probes in time-varying fields * Electronegative discharges * Pulsed power discharges * Dual frequency discharges * High-density rf sheaths and ion energy distributions * Hysteresis and instabilities * Helicon discharges * Hollow cathode discharges * Ionized physical vapor deposition * Differential substrate charging With new chapters on dusty plasmas and the kinetic theory of discharges, graduate students and researchers in the field of plasma processing should find this new edition more valuable than ever. |
From inside the book
Results 1-5 of 91
Page xxvii
... potential energy (J) velocity (m / s); vibrational quantum number; 5, average speed; 12th, thermal velocity; 0R, relative velocity; vph, phase velocity voltage or electric potential (V); 17, 1f voltage; V, dc or time—average voltage ...
... potential energy (J) velocity (m / s); vibrational quantum number; 5, average speed; 12th, thermal velocity; 0R, relative velocity; vph, phase velocity voltage or electric potential (V); 17, 1f voltage; V, dc or time—average voltage ...
Page xxviii
... potential (V); (DP, plasma potential; (PW, wall potential angle (rad); X01, first zero of zero order Bessel function spherical polar angle in velocity space helix pitch (rad) radian frequency (rad/s); (upe, electron plasma frequency; wc ...
... potential (V); (DP, plasma potential; (PW, wall potential angle (rad); X01, first zero of zero order Bessel function spherical polar angle in velocity space helix pitch (rad) radian frequency (rad/s); (upe, electron plasma frequency; wc ...
Page 11
... potential profile <I>(x) that is positive within the plasma and falls sharply to zero near both walls. This acts as a confining potential “valley” for electrons and a “hill” for ions because the electric fields within the sheaths point ...
... potential profile <I>(x) that is positive within the plasma and falls sharply to zero near both walls. This acts as a confining potential “valley” for electrons and a “hill” for ions because the electric fields within the sheaths point ...
Page 12
... potential after formation of the sheath. a 5m b . 28+06( I Phase l.53+13{ I mm' M .. A M .. "i n00 R. -2 06 o H 0 x ... potential <1); (e) electron number N versus time t in seconds; (f) right hand potential Vr versus time t. Id ...
... potential after formation of the sheath. a 5m b . 28+06( I Phase l.53+13{ I mm' M .. A M .. "i n00 R. -2 06 o H 0 x ... potential <1); (e) electron number N versus time t in seconds; (f) right hand potential Vr versus time t. Id ...
Page 13
Michael A. Lieberman, Alan J. Lichtenberg. Id] Potential (9] Number 3.0 4000.0 4: (2:) N0) 0.0. 0. x. 0.1. 3550-00. Time. 4.6815. -. 0.7. if) FIHS Potential 0.0289 ,- Him CFIBS—i'l. 4.1.1.. I. I”. —0.133 I I1 Time 4.6812 — 0.? FIGURE 1.11 ...
Michael A. Lieberman, Alan J. Lichtenberg. Id] Potential (9] Number 3.0 4000.0 4: (2:) N0) 0.0. 0. x. 0.1. 3550-00. Time. 4.6815. -. 0.7. if) FIHS Potential 0.0289 ,- Him CFIBS—i'l. 4.1.1.. I. I”. —0.133 I I1 Time 4.6812 — 0.? FIGURE 1.11 ...
Contents
| 1 | |
| 23 | |
| 43 | |
4 PLASMA DYNAMICS | 87 |
5 DIFFUSION AND TRANSPORT | 133 |
6 DIRECT CURRENT DC SHEATHS | 165 |
7 CHEMICAL REACTIONS AND EQUILIBRIUM | 207 |
8 MOLECULAR COLLISIONS | 235 |
13 WAVEHEATED DISCHARGES | 491 |
14 DIRECT CURRENT DC DISCHARGES | 535 |
15 ETCHING | 571 |
16 DEPOSITION AND IMPLANTATION | 619 |
17 DUSTY PLASMAS | 649 |
18 KINETIC THEORY OF DISCHARGES | 679 |
APPENDIX A COLLISION DYNAMICS | 723 |
APPENDIX B THE COLLISION INTEGRAL | 727 |
9 CHEMICAL KINETICS AND SURFACE PROCESSES | 285 |
10 PARTICLE AND ENERGY BALANCE IN DISCHARGES | 327 |
11 CAPACITIVE DISCHARGES | 387 |
12 INDUCTIVE DISCHARGES | 461 |
APPENDIX C DIFFUSION SOLUTIONS FOR VARIABLE MOBILITY MODEL | 731 |
REFERENCES | 735 |
INDEX | 749 |
Other editions - View all
Principles of Plasma Discharges and Materials Processing Michael A. Lieberman,Allan J. Lichtenberg No preview available - 1994 |
Principles of Plasma Discharges and Materials Processing Michael A. Lieberman,Alan J. Lichtenberg No preview available - 2005 |
Principles of Plasma Discharges and Materials Processing Michael A. Lieberman,Allan J. Lichtenberg No preview available - 2024 |
Common terms and phrases
ambipolar anisotropic approximation argon assume Boltzmann relation bulk plasma calculation capacitive discharge cathode Chapter charge chemisorption collision collisional collisionless configuration cross section Debye length defined deposition determine diffusion coefficient dissociation distribution elastic collision electric field electron density electron temperature electronegative electropositive emission enthalpy equation equilibrium etch rate etchant example excitation F atoms film find first fixed flow flux frequency given helicon helicon discharges Hence increase integrating ion density ion energy ion flux ionization kinetic Langmuir probe Lieberman low pressures magnetic field Maxwellian mean free path metastable molecules mTorr negative ion neutral obtain ohmic heating oscillating oxide parameters particle photoresist physisorption plasma density positive ion potential probe profile radius rate constant ratio reaction recombination regime region resonance scattering sheath edge shown in Figure significant silicon skin depth solution species sputter deposition sputtering stochastic heating substrate surface thermal typical velocity versus voltage wave yields
Popular passages
Page 34 - It will be remembered that, from the velocity of sound in a gas, the ratio of specific heat at constant pressure to that at constant volume...
Page 238 - Vibrational and rotational levels of two electronic states A and B of a molecule (schematic).
Page 15 - ... the positive charge exceeds the negative charge in the system, with the excess appearing within the sheaths. This excess produces a strong time-averaged electric field within each sheath directed from the plasma to the electrode. Ions flowing out of the bulk plasma near the center of the discharge can be accelerated by the sheath fields to high energies as they flow to the substrate, leading to energetic-ion enhanced processes. Typical ion bombarding energies 6, can be as high as Vrf/2 for symmetric...
Page 66 - The Pauli exclusion principle states that no two electrons can have the same set of quantum numbers when spin is included.
Page 14 - J is the thermionic current per square centimeter of cathode surface, V the voltage between anode and cathode, x the distance between anode and cathode, and e and m are the charge and mass of the ion respectively. This equation was deduced on the assumption that both cathode and anode are equipotential surfaces of infinite extent. The equations that hold in the case in which the cathode is a filament, and therefore not an equipotential surface, were obtained theoretically by W. Wilson, of this laboratory....
Page 17 - During that time, the instantaneous sheath potential collapses to near zero, allowing sufficient electrons to escape to balance the ion charge delivered to the electrode. Except for such brief moments, the instantaneous potential of the discharge must always be positive with respect to any large electrode and wall surface; otherwise the mobile electrons would quickly leak out. Electron confinement is ensured by the presence of positive space charge sheaths near all surfaces.
Page 14 - Figure 1.12a, consists of a vacuum chamber containing two planar electrodes separated by a spacing / and driven by an rf power source. The substrates are placed on one electrode, feedstock gases are admitted to flow through the discharge, and effluent gases are removed by the vacuum pump. Coaxial discharge geometries, such as the "hexode" shown in Figure l.l2b, are also in widespread use.
Page 237 - Z+ orl." depending upon whether the wave function is symmetric or antisymmetric with respect to reflection in any plane containing the molecular axis. Without going into the details, suffice to say that most wavefunctions give I.+ states. A."L" state can arise when two electrons with parallel spins occupy n or 8 orbitals.