Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 345
... a quartz reactor 90 - cm long and 7 cm in diameter . The plasma of 1-5 % SiH4 in N2 was established at 500 kHz . Growth rates at a substrate temperature of 500 ° C up to 400 Å / min were measured . Figure 6 shows the refractive index ...
... a quartz reactor 90 - cm long and 7 cm in diameter . The plasma of 1-5 % SiH4 in N2 was established at 500 kHz . Growth rates at a substrate temperature of 500 ° C up to 400 Å / min were measured . Figure 6 shows the refractive index ...
Page 422
... A [ HF ] + B [ HF ] + C , where R is in angstroms per minute and the concentrations are molar . The rate constants ... min for CVD Si̟ , N , but only 0-25 Å / min for the CVD SiO , etch mask and 3 Å / min for any exposed single- crystal ...
... A [ HF ] + B [ HF ] + C , where R is in angstroms per minute and the concentrations are molar . The rate constants ... min for CVD Si̟ , N , but only 0-25 Å / min for the CVD SiO , etch mask and 3 Å / min for any exposed single- crystal ...
Page 519
... an ion beam system [ 46 ] and in Fig . 9b for an rf sput- ETCHING RATE ( A / MIN ) SPUTTER ETCH RATE ( A / MIN ) 450 300 150 -V- O 10-6 2000 1600 1200 800 400 10-5 ( a ) --- + OXYGEN PARTIAL PRESSURE ( Torr ) Au Pt IN 10 4 Ti O 100 80 ...
... an ion beam system [ 46 ] and in Fig . 9b for an rf sput- ETCHING RATE ( A / MIN ) SPUTTER ETCH RATE ( A / MIN ) 450 300 150 -V- O 10-6 2000 1600 1200 800 400 10-5 ( a ) --- + OXYGEN PARTIAL PRESSURE ( Torr ) Au Pt IN 10 4 Ti O 100 80 ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min