Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 345
... a quartz reactor 90 - cm long and 7 cm in diameter . The plasma of 1-5 % SiH4 in N2 was established at 500 kHz . Growth rates at a substrate temperature of 500 ° C up to 400 Å / min were measured . Figure 6 shows the refractive index ...
... a quartz reactor 90 - cm long and 7 cm in diameter . The plasma of 1-5 % SiH4 in N2 was established at 500 kHz . Growth rates at a substrate temperature of 500 ° C up to 400 Å / min were measured . Figure 6 shows the refractive index ...
Page 422
... A [ HF ] + B [ HF ] + C , where R is in angstroms per minute and the concentrations are molar . The rate constants ... min for CVD Si̟ , N , but only 0-25 Å / min for the CVD SiO , etch mask and 3 Å / min for any exposed single- crystal ...
... A [ HF ] + B [ HF ] + C , where R is in angstroms per minute and the concentrations are molar . The rate constants ... min for CVD Si̟ , N , but only 0-25 Å / min for the CVD SiO , etch mask and 3 Å / min for any exposed single- crystal ...
Page 519
... an ion beam system [ 46 ] and in Fig . 9b for an rf sput- ETCHING RATE ( A / MIN ) SPUTTER ETCH RATE ( A / MIN ) 450 300 150 -V- O 10-6 2000 1600 1200 800 400 10-5 ( a ) --- + OXYGEN PARTIAL PRESSURE ( Torr ) Au Pt IN 10 4 Ti O 100 80 ...
... an ion beam system [ 46 ] and in Fig . 9b for an rf sput- ETCHING RATE ( A / MIN ) SPUTTER ETCH RATE ( A / MIN ) 450 300 150 -V- O 10-6 2000 1600 1200 800 400 10-5 ( a ) --- + OXYGEN PARTIAL PRESSURE ( Torr ) Au Pt IN 10 4 Ti O 100 80 ...
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Common terms and phrases
Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York