Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 257
John L. Vossen, Werner Kern. III - 2 Chemical Vapor Deposition of Inorganic Thin Films WERNER KERN AND VLADIMIR S. BAN RCA Laboratories Princeton , New Jersey I. Introduction II . Fundamental Aspects of CVD A. Chemistry of CVD B ...
John L. Vossen, Werner Kern. III - 2 Chemical Vapor Deposition of Inorganic Thin Films WERNER KERN AND VLADIMIR S. BAN RCA Laboratories Princeton , New Jersey I. Introduction II . Fundamental Aspects of CVD A. Chemistry of CVD B ...
Page 278
John L. Vossen, Werner Kern. tance , oxidation resistance , etc. , are required . The differences between the lattice parameters of the substrate and the deposit are frequently too large to allow epitaxy under any ... KERN AND VLADIMIR S.
John L. Vossen, Werner Kern. tance , oxidation resistance , etc. , are required . The differences between the lattice parameters of the substrate and the deposit are frequently too large to allow epitaxy under any ... KERN AND VLADIMIR S.
Page 418
... Kern [ 27 ] . This figure was originally presented at the 149th Spring Meeting of The Electrochemical Society , Inc. in Washington , D.C. ) . b . Borosilicates . Binary borosilicate glasses ( BSG ) are important as dop- ant sources and ...
... Kern [ 27 ] . This figure was originally presented at the 149th Spring Meeting of The Electrochemical Society , Inc. in Washington , D.C. ) . b . Borosilicates . Binary borosilicate glasses ( BSG ) are important as dop- ant sources and ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min