Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 83
... sections are shown in Fig . 5 . For an electron energy of 10 eV the total cross section is ~ 2 × 10-15 cm2 and the collision frequency v 。= nσve is about 10 sec - 1 . Thus the calculated mobility μe is ~ 1.5 × 108 cm2 / volt - sec ...
... sections are shown in Fig . 5 . For an electron energy of 10 eV the total cross section is ~ 2 × 10-15 cm2 and the collision frequency v 。= nσve is about 10 sec - 1 . Thus the calculated mobility μe is ~ 1.5 × 108 cm2 / volt - sec ...
Page 84
... SECTION ( cm2 ) MOMENTUM TRANSFER ( 1 ) MOMENTUM TRANSFER 2 16 www 6 1884 10 2 10-17 8 6 سلـ TOTAL CROSS SECTION Ar + IONIZATION Ar ww 4 2 -18 10 لس لس لس 2 4 68 2 1 10 4 682 2 10 4 68 2 10 68104 ELECTRON ENERGY ( eV ) Fig . 5 ...
... SECTION ( cm2 ) MOMENTUM TRANSFER ( 1 ) MOMENTUM TRANSFER 2 16 www 6 1884 10 2 10-17 8 6 سلـ TOTAL CROSS SECTION Ar + IONIZATION Ar ww 4 2 -18 10 لس لس لس 2 4 68 2 1 10 4 682 2 10 4 68 2 10 68104 ELECTRON ENERGY ( eV ) Fig . 5 ...
Page 86
... Section II.B. Such oscillations are believed to play an important role in the primary electron energy exchange and in the operation of plasma magnetrons ( see Section II.G ) . F. Cold Cathode Discharges A low pressure cold cathode ...
... Section II.B. Such oscillations are believed to play an important role in the primary electron energy exchange and in the operation of plasma magnetrons ( see Section II.G ) . F. Cold Cathode Discharges A low pressure cold cathode ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min