Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 236
... addition , more subtle changes take place at the electrode surfaces ( variously termed overvoltage , polariza- tion , and overpotential ) . When the electrode reactions move away from dynamic equilibrium by the imposition of a potential ...
... addition , more subtle changes take place at the electrode surfaces ( variously termed overvoltage , polariza- tion , and overpotential ) . When the electrode reactions move away from dynamic equilibrium by the imposition of a potential ...
Page 520
... addition of 10 % O2 . Beyond this value the rate dropped off again . Coburn et al . [ 35 ] have postulated that the rea- son for this is that the addition of a small amount of O2 removes the car- bon contamination produced by ...
... addition of 10 % O2 . Beyond this value the rate dropped off again . Coburn et al . [ 35 ] have postulated that the rea- son for this is that the addition of a small amount of O2 removes the car- bon contamination produced by ...
Page 527
... addition of O , to many of the halocarbons and some other halogen containing gases often has beneficial effects on etching . As indicated in Section II.C.4 , several percent O2 markedly increases the concentration of atomic F in CF4 ...
... addition of O , to many of the halocarbons and some other halogen containing gases often has beneficial effects on etching . As indicated in Section II.C.4 , several percent O2 markedly increases the concentration of atomic F in CF4 ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min