Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 236
... addition , more subtle changes take place at the electrode surfaces ( variously termed overvoltage , polariza- tion , and overpotential ) . When the electrode reactions move away from dynamic equilibrium by the imposition of a potential ...
... addition , more subtle changes take place at the electrode surfaces ( variously termed overvoltage , polariza- tion , and overpotential ) . When the electrode reactions move away from dynamic equilibrium by the imposition of a potential ...
Page 520
... addition of 10 % O2 . Beyond this value the rate dropped off again . Coburn et al . [ 35 ] have postulated that the rea- son for this is that the addition of a small amount of O2 removes the car- bon contamination produced by ...
... addition of 10 % O2 . Beyond this value the rate dropped off again . Coburn et al . [ 35 ] have postulated that the rea- son for this is that the addition of a small amount of O2 removes the car- bon contamination produced by ...
Page 527
... addition of O2 to many of the halocarbons and some other halogen containing gases often has beneficial effects on etching . As indicated in Section II.C.4 , several percent O , markedly increases the concentration of atomic F in CF4 ...
... addition of O2 to many of the halocarbons and some other halogen containing gases often has beneficial effects on etching . As indicated in Section II.C.4 , several percent O , markedly increases the concentration of atomic F in CF4 ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York