Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 21
... ARGON ION ENERGY ( eV ) Fig . 2. Argon content of Si versus incident ion energy ( after Comas and Carosella [ 78 ] , with permission of The Electrochemical Society ) . E. Altered Surface Layers and Diffusion 1. Multicomponent Targets ...
... ARGON ION ENERGY ( eV ) Fig . 2. Argon content of Si versus incident ion energy ( after Comas and Carosella [ 78 ] , with permission of The Electrochemical Society ) . E. Altered Surface Layers and Diffusion 1. Multicomponent Targets ...
Page 108
... argon pressure , 1.5 mTorr ; ( c ) cylindrical - hollow magnetron , niobium - nitrogen , current , 10 A , argon pressure , 1.5 mTorr . [ 122-127 ] . The uniformity of the cathode current density and chemistry , and the symmetry ...
... argon pressure , 1.5 mTorr ; ( c ) cylindrical - hollow magnetron , niobium - nitrogen , current , 10 A , argon pressure , 1.5 mTorr . [ 122-127 ] . The uniformity of the cathode current density and chemistry , and the symmetry ...
Page 177
... argon [ 3 ] , therefore high electron energies are not needed for efficient ion- ization . More important are the electron supply rate and gas pressure , since the mean free path for ionization is inversely proportional to gas pressure ...
... argon [ 3 ] , therefore high electron energies are not needed for efficient ion- ization . More important are the electron supply rate and gas pressure , since the mean free path for ionization is inversely proportional to gas pressure ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York