Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 354
... atomic fraction of hydrogen in films prepared at 250 ° C and 0.1 Torr is 0.14 ( 0.7 × 1022 atoms / cm3 ) , while at 25 ° C and 1.0 Torr the atomic fraction is 0.35 ( 1.7 × 1022 atoms / cm3 ) . = The amount of hydrogen contained in ...
... atomic fraction of hydrogen in films prepared at 250 ° C and 0.1 Torr is 0.14 ( 0.7 × 1022 atoms / cm3 ) , while at 25 ° C and 1.0 Torr the atomic fraction is 0.35 ( 1.7 × 1022 atoms / cm3 ) . = The amount of hydrogen contained in ...
Page 502
... atoms etch Si much faster than SiO2 . Typically , the etch rate ratio Si / SiO2 is greater than 10 : 1 when F atoms are the etchant . Under these conditions , it is virtually impossible to prevent degradation of the silicon substrate ...
... atoms etch Si much faster than SiO2 . Typically , the etch rate ratio Si / SiO2 is greater than 10 : 1 when F atoms are the etchant . Under these conditions , it is virtually impossible to prevent degradation of the silicon substrate ...
Page 506
... atomic oxygen , competes with F atoms for active surface sites , thereby , inhibiting etching . Consequently , the maximum etch rate for Si occurs at a lower O2 concentration than that which produces a maximum F atom concentration as ...
... atomic oxygen , competes with F atoms for active surface sites , thereby , inhibiting etching . Consequently , the maximum etch rate for Si occurs at a lower O2 concentration than that which produces a maximum F atom concentration as ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min