Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 23
... ature related to electron spectroscopy for chemical analysis ( ESCA ) that gives direct , quantitative evidence of this effect [ 105-107 ] . What is less obvious is the relationship between film stoichiometry and target bom- barding ...
... ature related to electron spectroscopy for chemical analysis ( ESCA ) that gives direct , quantitative evidence of this effect [ 105-107 ] . What is less obvious is the relationship between film stoichiometry and target bom- barding ...
Page 282
... ature minimizes or even prevents undesirable deposition on the reactor walls . Hot - wall reactors are frequently tubular in form ; heating is most often accomplished by resistance elements surrounding the reactor tube . Combinations of ...
... ature minimizes or even prevents undesirable deposition on the reactor walls . Hot - wall reactors are frequently tubular in form ; heating is most often accomplished by resistance elements surrounding the reactor tube . Combinations of ...
Page 294
... ature to 1966 that is not referenced in detail in our survey . C. Mixed Oxides and Silicate Glasses Combination of two or more oxide source reactants in a given type of CVD reaction often ( but not always ) leads to films of mixed ...
... ature to 1966 that is not referenced in detail in our survey . C. Mixed Oxides and Silicate Glasses Combination of two or more oxide source reactants in a given type of CVD reaction often ( but not always ) leads to films of mixed ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York