Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 60
Page 57
... bias to an independent electrode ( e.g. a substrate ) leads to an increase in the plasma potential to more positive values [ 454 , 456 ] as shown in Fig . 18. Even for very high positive values of V , the effective substrate bias never ...
... bias to an independent electrode ( e.g. a substrate ) leads to an increase in the plasma potential to more positive values [ 454 , 456 ] as shown in Fig . 18. Even for very high positive values of V , the effective substrate bias never ...
Page 59
... bias . 1. Substrate Bias The effective substrate bias is the most important parameter in deter- mining gas incorporation [ 468-488 ] . At very low bias voltages , there is insufficient energy to implant gas , but some thermal desorption ...
... bias . 1. Substrate Bias The effective substrate bias is the most important parameter in deter- mining gas incorporation [ 468-488 ] . At very low bias voltages , there is insufficient energy to implant gas , but some thermal desorption ...
Page 158
... bias voltages from 0 to 400 V for disk planar magne- tron cathode potentials of 350-485 V , +35 V on a concentric - ring anode , and a 5 cm cathode - substrate separation . They found that at 5 mTorr argon pressure for substrate bias ...
... bias voltages from 0 to 400 V for disk planar magne- tron cathode potentials of 350-485 V , +35 V on a concentric - ring anode , and a 5 cm cathode - substrate separation . They found that at 5 mTorr argon pressure for substrate bias ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
10 other sections not shown
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min