Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 26
... cathode to anode . Adjacent to the cathode , there is a brilliant lumi- nous layer known as the cathode glow . This is the region in which incom- ing discharge ions and positive ions produced at the cathode are neutral- ized by a ...
... cathode to anode . Adjacent to the cathode , there is a brilliant lumi- nous layer known as the cathode glow . This is the region in which incom- ing discharge ions and positive ions produced at the cathode are neutral- ized by a ...
Page 137
... cathode backing plate is used . A disadvantage is that some portion of the deposition chamber wall must be designed to receive the cathode assembly . Cathode isolation details can vary from a simple stacked arrangement of the chamber ...
... cathode backing plate is used . A disadvantage is that some portion of the deposition chamber wall must be designed to receive the cathode assembly . Cathode isolation details can vary from a simple stacked arrangement of the chamber ...
Page 138
... cathode insulation fabrication should be free of seams that may be gas permeable . 3. Cathode Construction The cathode assembly consists of the source material , generally 3-10 mm thick , bonded to a backing plate which in turn forms ...
... cathode insulation fabrication should be free of seams that may be gas permeable . 3. Cathode Construction The cathode assembly consists of the source material , generally 3-10 mm thick , bonded to a backing plate which in turn forms ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min