Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 93
... cause other forms of containment to occur . A bowed - out shape causes magnetic containment at both ends . A wedge shape ( Fig . 10 , dashed line ) causes magnetic containment at one end and electrostatic at the other . A multiply bowed ...
... cause other forms of containment to occur . A bowed - out shape causes magnetic containment at both ends . A wedge shape ( Fig . 10 , dashed line ) causes magnetic containment at one end and electrostatic at the other . A multiply bowed ...
Page 305
... cause current leakage across a device surface and metal corrosion . Too low a P content ( i.e. , < 2 wt % P ) may result in cracking of the glass on Si because of excessive stress . c . Hydride Flow Rate . At a constant substrate ...
... cause current leakage across a device surface and metal corrosion . Too low a P content ( i.e. , < 2 wt % P ) may result in cracking of the glass on Si because of excessive stress . c . Hydride Flow Rate . At a constant substrate ...
Page 549
... cause se- vere undercutting of the remainder of the pattern . In the event that some overetching is required to allow for ion flux variations across the beam , ion etching , due to its anisotropic etching rate , will also be less ...
... cause se- vere undercutting of the remainder of the pattern . In the event that some overetching is required to allow for ion flux variations across the beam , ion etching , due to its anisotropic etching rate , will also be less ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min