Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 85
... charge sheath that develops over a cathode . S J1 = 27.3 ( 40 / M ) 1/2 ( V3 / 2 / d2 ) mA / cm2 , ( 12 ) where V ... charge neutrality , capable of generating waves , can occur in the form of charge bunching and separa- tion over ...
... charge sheath that develops over a cathode . S J1 = 27.3 ( 40 / M ) 1/2 ( V3 / 2 / d2 ) mA / cm2 , ( 12 ) where V ... charge neutrality , capable of generating waves , can occur in the form of charge bunching and separa- tion over ...
Page 200
... charge repulsion is the most fundamental limit to beam size , be- cause it remains even in a perfect optical system fed by a perfect ion source . Wilson and Brewer [ 76 ] discuss the regimes in which space charge repulsion dominates ...
... charge repulsion is the most fundamental limit to beam size , be- cause it remains even in a perfect optical system fed by a perfect ion source . Wilson and Brewer [ 76 ] discuss the regimes in which space charge repulsion dominates ...
Page 229
... charge , attracted to the anode , are anions . The solution immediately adjacent to the cathode is the catholyte ... charge ( e.g. , Zn2 ++ 4CN → Zn ( CN ) ̄ ) . Under the influence of an electric charge the ions migrate toward the ...
... charge , attracted to the anode , are anions . The solution immediately adjacent to the cathode is the catholyte ... charge ( e.g. , Zn2 ++ 4CN → Zn ( CN ) ̄ ) . Under the influence of an electric charge the ions migrate toward the ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min