Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 244
... complex is much weaker than the Cu cyanide complex . Thus , the potential of Zn is not affected so much , and Cu and Zn can be codeposited easily from cyanide solutions . For the Cu - Sn alloy , the two metals are complexed by different ...
... complex is much weaker than the Cu cyanide complex . Thus , the potential of Zn is not affected so much , and Cu and Zn can be codeposited easily from cyanide solutions . For the Cu - Sn alloy , the two metals are complexed by different ...
Page 301
... complex AICI , 3NH3 at 800- 1200 ° C with H2 and anhydrous NH , as the carrier gases , yielding poly- crystalline films [ 248 , 249 ] . Mixed compositions of AIN and Si3N1 pre- pared from AlCl3 , SiH ,, and NH , at 600-1100 ° C have ...
... complex AICI , 3NH3 at 800- 1200 ° C with H2 and anhydrous NH , as the carrier gases , yielding poly- crystalline films [ 248 , 249 ] . Mixed compositions of AIN and Si3N1 pre- pared from AlCl3 , SiH ,, and NH , at 600-1100 ° C have ...
Page 404
John L. Vossen, Werner Kern. Complex formation is frequently involved in etching processes , often in conjunction ... complexes which will facilitate the etching process ; however , in many cases adsorption of nonreactive species or for ...
John L. Vossen, Werner Kern. Complex formation is frequently involved in etching processes , often in conjunction ... complexes which will facilitate the etching process ; however , in many cases adsorption of nonreactive species or for ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min