Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 61
Page 21
... composition is that of the bulk target composition and the altered layer will recede uni- formly with continued sputtering as long as the steady state conditions are maintained . Data on altered layers come from several areas : sputter ...
... composition is that of the bulk target composition and the altered layer will recede uni- formly with continued sputtering as long as the steady state conditions are maintained . Data on altered layers come from several areas : sputter ...
Page 306
... COMPOSITION , MOLE % P205 IN P205 - S102 2 Fig . 18. Composition of PSG films as a function of hydride composition of the substrate deposition temperatures and O2 / ( SiH , + PH ̧ ) ratios ( R ) indicated . Data A by Kern et al . [ 261 ] ...
... COMPOSITION , MOLE % P205 IN P205 - S102 2 Fig . 18. Composition of PSG films as a function of hydride composition of the substrate deposition temperatures and O2 / ( SiH , + PH ̧ ) ratios ( R ) indicated . Data A by Kern et al . [ 261 ] ...
Page 417
... composition and density for a given phosphorus concentration , and the difference in selectivity of a typical BHF composition and a variety of unbuffered HF mixtures . Note that the etch rate of PSG in BHF is much less affected by the ...
... composition and density for a given phosphorus concentration , and the difference in selectivity of a typical BHF composition and a variety of unbuffered HF mixtures . Note that the etch rate of PSG in BHF is much less affected by the ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
10 other sections not shown
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min