Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 21
... composition is that of the bulk target composition and the altered layer will recede uni- formly with continued sputtering as long as the steady state conditions are maintained . Data on altered layers come from several areas : sputter ...
... composition is that of the bulk target composition and the altered layer will recede uni- formly with continued sputtering as long as the steady state conditions are maintained . Data on altered layers come from several areas : sputter ...
Page 306
... COMPOSITION , MOLE % PH3 IN SIH2 + PH3 12 24 10 -- --- 12 14 3.2 DO HYDRIDE MOLE RATIO , SiH4 / PH3 15 20 -- 30 50 -100 0 1 2 4 GLASS COMPOSITION , MOLE % P205 IN P205 - S102 6 8 10 12 14 16 18 4 2 = Fig . 18. Composition of PSG films ...
... COMPOSITION , MOLE % PH3 IN SIH2 + PH3 12 24 10 -- --- 12 14 3.2 DO HYDRIDE MOLE RATIO , SiH4 / PH3 15 20 -- 30 50 -100 0 1 2 4 GLASS COMPOSITION , MOLE % P205 IN P205 - S102 6 8 10 12 14 16 18 4 2 = Fig . 18. Composition of PSG films ...
Page 417
... composition and density for a given phosphorus concentration , and the difference in selectivity of a typical BHF composition and a variety of unbuffered HF mixtures . Note that the etch rate of PSG in BHF is much less affected by the ...
... composition and density for a given phosphorus concentration , and the difference in selectivity of a typical BHF composition and a variety of unbuffered HF mixtures . Note that the etch rate of PSG in BHF is much less affected by the ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York